6533b827fe1ef96bd1286eea

RESEARCH PRODUCT

Magneto-Transport Results in Alq3 Based OSVs

Marta Galbiati

subject

chemistry.chemical_compoundMaterials scienceFerromagnetismSpin polarizationMagnetoresistancechemistryCondensed matter physicsInelastic electron tunneling spectroscopySpin valveOxideMagnetoSpin-½

description

The achievement of good magnetoresistance signal at room temperature is an important requirement for the possible future development of organic devices for applications. However, until now only few works reported room temperature MR effect in organic spin valves (OSVs). In this regard, this chapter is dedicated to the investigation of Alq3-based OSVs where Alq3 molecule was chosen since it is a standard material in the field. A systematic study on Co/Alq3/Co OSVs will be presented showing room temperature MR results. Moreover, inelastic electron tunneling spectroscopy (IETS) technique will be used to prove spin injection into the organic layer. Finally, an insulating oxide barrier (Al2O3 or MgO) will be also inserted at the bottom or top interface. This will allow to separately investigate the specific role of ferromagnetic metal/molecule hybridization at each interface and understand their influence on the spin polarization properties.

yearjournalcountryeditionlanguage
2015-10-15
https://doi.org/10.1007/978-3-319-22611-8_8