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RESEARCH PRODUCT
Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
Aleks AidlaScott Houston MeiereRonald F. SpohnMikko RitalaTimo SajavaaraKaupo KukliKaupo KukliIndrek JõgiTõnis ArrovalJim NatworaJohn PeckAlma-asta KiislerJaan AarikDavid ThompsonJoan GearyMarkku LeskeläJun LuMikko Laitinensubject
Materials scienceSiliconHydrogenNucleationchemistry.chemical_elementNanotechnology02 engineering and technology01 natural sciencesMetalAtomic layer deposition0103 physical sciencesMaterials ChemistryThin filmta116010302 applied physicsta114Metals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnologyNanocrystalline materialSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsRutheniumchemistryChemical engineeringvisual_artvisual_art.visual_art_medium0210 nano-technologydescription
Abstract Ru thin films were grown on hydrogen terminated Si, SiO 2 , Al 2 O 3 , HfO 2 , and TiO 2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4–20 nm thick films on these surfaces consisted of nanocrystalline hexagonal metallic ruthenium, regardless of the deposition temperature. At the lowest temperatures examined, 250–255 °C, the growth of the Ru films was favored on silicon, compared to the growth on Al 2 O 3 , TiO 2 and HfO 2 . At higher temperatures the nucleation and growth of Ru became enhanced in particular on HfO 2 , compared to the process on silicon. At 320–325 °C, no growth occurred on Si–H and SiO 2 -covered silicon. Resistivity values down to 18 μΩ·cm were obtained for ca. 10 nm thick Ru films.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-01-01 | Thin Solid Films |