6533b82dfe1ef96bd1291bfc

RESEARCH PRODUCT

Influence of irradiation on the switching behavior in PZT thin films

D. K. KuznetsovCh. MullerIvan BaturinVladimir Ya. ShurAndris SternbergJean-louis HodeauN. Menou

subject

In situDiffractionMaterials scienceMechanical EngineeringElectronCondensed Matter PhysicsSynchrotronlaw.inventionCapacitorCrystallographyMechanics of MaterialslawGeneral Materials ScienceIrradiationThin filmComposite materialNeutron irradiation

description

Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol–gel Pb(Zr,Ti)O3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1 1 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics. © 2005 Published by Elsevier B.V.

yearjournalcountryeditionlanguage
2005-07-01Materials Science and Engineering: B
https://doi.org/10.1016/j.mseb.2005.02.024