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RESEARCH PRODUCT
The correlation of the 7.6 eV optical absorption band in pure fused silicon dioxide with twofold-coordinated silicon
Linards SkujaV.s. RudenkoA.g. BoganovAnatoly N. Trukhinsubject
Range (particle radiation)Materials scienceExtended X-ray absorption fine structureSiliconSilicon dioxidePhotodissociationAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsPhotochemistryTwo-photon absorptionElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistryAbsorption bandMaterials ChemistryCeramics and CompositesAbsorption (electromagnetic radiation)description
Abstract The optical absorption band at 7.6 eV, which appears in oxygen deficient pure silica, does not correlate with any ESR signal in non-irradiated samples. Longlasting illumination at 80 K in the range of its absorption leads to an increase of the absorption band at 5 eV. Subsequent heating to 290 K restores the initial absorption. These data can be explained as photodissociation and thermal recreation of a complex defect containing a twofold-coordinated silicon defect. This complex defect is responsible for the 7.6 eV absorption band.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1992-10-01 | Journal of Non-Crystalline Solids |