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RESEARCH PRODUCT
Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor
Felix MattelaerMikko NisulaJolien DendoovenChristophe DetavernierTimo SajavaaraMichiel Van DaeleSimon D. ElliottMatthias Minjauwsubject
Materials scienceHydrogenDopantGrapheneTrimethyl borateGeneral Chemical EngineeringInorganic chemistryDopingchemistry.chemical_element02 engineering and technologyGeneral ChemistryNitride010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionAtomic layer depositionchemistry.chemical_compoundchemistrylawMaterials Chemistry0210 nano-technologyBorondescription
Atomic layer deposition (ALD) of boron-containing films has been mainly studied for use in two-dimensional materials and for B doping of Si. Furthermore, lithium-containing borates show great promi...
year | journal | country | edition | language |
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2020-04-23 | Chemistry of Materials |