6533b82ffe1ef96bd12964a0

RESEARCH PRODUCT

Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor

Felix MattelaerMikko NisulaJolien DendoovenChristophe DetavernierTimo SajavaaraMichiel Van DaeleSimon D. ElliottMatthias Minjauw

subject

Materials scienceHydrogenDopantGrapheneTrimethyl borateGeneral Chemical EngineeringInorganic chemistryDopingchemistry.chemical_element02 engineering and technologyGeneral ChemistryNitride010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionAtomic layer depositionchemistry.chemical_compoundchemistrylawMaterials Chemistry0210 nano-technologyBoron

description

Atomic layer deposition (ALD) of boron-containing films has been mainly studied for use in two-dimensional materials and for B doping of Si. Furthermore, lithium-containing borates show great promi...

https://doi.org/10.1021/acs.chemmater.9b04967