6533b830fe1ef96bd1296e60

RESEARCH PRODUCT

Modeling and parameter identification of crystalline silicon photovoltaic devices

Lars NorumOle-morten MidtgardGeorgi Hristov Yordanov

subject

Materials scienceMaximum power principleSiliconbusiness.industryPhotovoltaic systemElectrical engineeringIrradianceSemiconductor device modelingchemistry.chemical_elementchemistryOptoelectronicsCrystalline siliconbusinessShunt (electrical)Voltage

description

This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.

yearjournalcountryeditionlanguage
2011-06-012011 International Conference on Clean Electrical Power (ICCEP)
https://doi.org/10.1109/iccep.2011.6036313