6533b830fe1ef96bd1296f44

RESEARCH PRODUCT

ACCURATE MEASUREMENTS OF OPTIMUM NOISE PARAMETERS OF MICROWAVE TRANSISTORS

Giovanni MartinesM. Sannino

subject

Noise temperatureEngineeringNoise-figure meterbusiness.industryAcousticsY-factorCondensed Matter::Mesoscopic Systems and Quantum Hall EffectNoise figureLow-noise amplifierNoise generatorHardware_INTEGRATEDCIRCUITSElectronic engineeringEffective input noise temperatureFlicker noisebusiness

description

A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.

yearjournalcountryeditionlanguage
1986-01-01
https://doi.org/10.1016/b978-0-444-86992-0.50067-9