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RESEARCH PRODUCT

Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors

Antonino ButtacavoliFabio PrincipatoGaetano GerardiManuele BettelliMatthew C. VealeLeonardo Abbene

subject

X-ray and gamma ray detectorsCdZnTe detectorsCompound semiconductor detectorsCross talkSpectroscopic X-ray imagingSettore FIS/01 - Fisica SperimentaleCharge sharingSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)CdTe detectors

description

Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium-zinc-telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current state of the art of the discrimination/correction techniques. The results from original energy-recovery procedures of multiple charge sharing events, recently developed by our group, are also shown.

yearjournalcountryeditionlanguage
2023-01-01
10.1007/978-3-031-20955-0_10https://hdl.handle.net/10447/593073