6533b833fe1ef96bd129b391

RESEARCH PRODUCT

Writing and reading antiferromagnetic Mn

Bodnar S YuŠMejkal LTurek IJungwirth TGomonay OSinova JSapozhnik A AElmers H-jKläui MJourdan M

subject

Condensed Matter::Materials ScienceCondensed Matter::Mesoscopic Systems and Quantum Hall EffectArticle

description

Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn2Au(001) thin films were generated by pulse current densities of ≃107 A/cm2. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.

10.1038/s41467-017-02780-xhttps://pubmed.ncbi.nlm.nih.gov/29367633