6533b833fe1ef96bd129c046
RESEARCH PRODUCT
Line mixing in the stimulated Raman spectrum of the ν1 band of SiH4 at 0.4–1.0 bar
Bruno LavorelGuy MillotR. PykhovR. Pykhovsubject
Couplingchemistry.chemical_classificationRadiationMaterials scienceSpectrum (functional analysis)Molecular physicsAtomic and Molecular Physics and Opticssymbols.namesakechemistrysymbolsStimulated ramanRaman spectroscopyInorganic compoundSpectroscopyMixing (physics)Line (formation)Bar (unit)description
The stimulated Raman spectrum of the ν1 band of SiH4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.
year | journal | country | edition | language |
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1993-06-01 | Journal of Quantitative Spectroscopy and Radiative Transfer |