6533b833fe1ef96bd129cad9

RESEARCH PRODUCT

Dynamic $\mathrm{R}_{\mathrm{ON}}$ evaluation of commercial GaN HEMT under different switching and radiation conditions

Enrique MasetPedro J. MartinezD. GilabertEsteban Sanchis-kilders

subject

Physicschemistry.chemical_compoundCondensed matter physicschemistryStress timeGallium nitrideHigh-electron-mobility transistorRadiationSpace (mathematics)Dynamic resistance

description

This paper focus on the study of dynamic resistance $(\mathrm{R}_{\mathrm{dyn}})$ over commercial Gallium Nitride High Electromobility Transistors (GaN HEMTs) devices. The first part shows a study of the main mechanism causing $\mathrm{R}_{\mathrm{dyn}}$ , showing that depending on the structure, stress time, voltage applied and switching conditions, the $\mathrm{R}_{\mathrm{dyn}}$ can suffer a relevant increase. Also, it is demonstrated how the use of soft-switching conditions can alleviate trapping effects. Finally, due to the interest over these devices for future space applications, the effects of gamma radiation over the $\mathrm{R}_{\mathrm{dyn}}$ has been studied.

yearjournalcountryeditionlanguage
2019-09-012019 European Space Power Conference (ESPC)
https://doi.org/10.1109/espc.2019.8932049