6533b834fe1ef96bd129e063
RESEARCH PRODUCT
Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal
Andrey V SolovʼyovAndrei V. KorolVictor G Bezchastnovsubject
Accelerator Physics (physics.acc-ph)PhysicsAstrophysics::High Energy Astrophysical PhenomenaBent molecular geometryFOS: Physical sciencesElectronRadiationUndulatorCondensed Matter PhysicsAtomic and Molecular Physics and OpticsMonocrystalline siliconMolecular dynamicsRecoilPhysics::Accelerator PhysicsPhysics - Accelerator PhysicsAtomic physicsQuantumdescription
A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation from multi-GeV electrons and positrons channeling through the crystal. Benchmark theoretical results on the undulator are obtained by simulations of the channeling with a full atomistic approach to the projectile-crystal interactions over the macroscopic propagation distances. The simulations are facilitated by employing the MBN Explorer package for molecular dynamics calculations on the meso-, bio- and nano-scales. The radiation from the ultra-relativistic channeling projectiles is computed within the quasi-classical formalism. The effects due to the quantum recoil are shown to be significantly prominent in the gamma-ray undulator radiation.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-05-26 | Journal of Physics B: Atomic, Molecular and Optical Physics |