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RESEARCH PRODUCT

Twin coarsening in CdTe(111) films grown on GaAs(100)

Carmen MunueraC. PolopCarmen OcalIván Mora-seróJ. García De AndrésVicente Muñoz-sanjosé

subject

Materials sciencePolymers and PlasticsCondensed matter physicsAnnealing (metallurgy)business.industryMetals and AlloysStackingEpitaxyMicrostructureCadmium telluride photovoltaicsElectronic Optical and Magnetic MaterialsCrystallographySemiconductorCeramics and CompositesCrystal twinningbusinessStacking fault

description

Abstract We present a scanning force microscopy study of twin coarsening in CdTe(1 1 1) films grown on GaAs(1 0 0). Two types of CdTe(1 1 1) twins grow epitaxially and with equal probability on the long-range wavy surface structure developed by previous in situ annealing of the GaAs(1 0 0) substrate. Due to this initial substrate wavy structure, the grain coarsening during film growth leads to a quasi-one-dimensional rippled pattern. We propose a coarsening mechanism between twins driven by the formation of stacking faults.

yearjournalcountryeditionlanguage
2006-09-01Acta Materialia
https://doi.org/10.1016/j.actamat.2006.05.025