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RESEARCH PRODUCT

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Arto JavanainenVeronique Ferlet-cavroisKenneth F. GallowayRobert A. ReedJean-marie LauensteinRonald D. SchrimpfFrancesco PintacudaAri Virtanen

subject

silicon carbide (SiC)Materials scienceAnnealing (metallurgy)Schottky barrierSchottky diodesMetal–semiconductor junction01 natural sciencesTemperature measurementpower semiconductor deviceschemistry.chemical_compoundstomatognathic system0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringSafety Risk Reliability and QualityDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingElectronic Optical and Magnetic MaterialschemistryOptoelectronicsbusinession radiation effectsVoltage

description

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

yearjournalcountryeditionlanguage
2016-06-01IEEE Transactions on Device and Materials Reliability
https://doi.org/10.1109/tdmr.2016.2557585