6533b838fe1ef96bd12a466f
RESEARCH PRODUCT
InAs/InP single quantum wire formation and emission at 1.5 microns
B. AlénD. FusterY. GonzálezL. GonzálezJ. Martínez-pastorM. U. GonzálezJ. M. Garcíasubject
Condensed Matter::Materials ScienceCondensed Matter - Mesoscale and Nanoscale PhysicsMesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciencesCondensed Matter::Mesoscopic Systems and Quantum Hall Effectdescription
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.
year | journal | country | edition | language |
---|---|---|---|---|
2006-06-06 |