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RESEARCH PRODUCT
Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells
Andrés CantareroAlberto García-cristóbalA. Molinasubject
Condensed Matter::Quantum GasesMaterials scienceAbsorption spectroscopyCondensed matter physicsCondensed Matter::OtherGeneral Engineering: Physics [G04] [Physical chemical mathematical & earth Sciences]Gallium nitrideElectronic structureCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials Sciencechemistry.chemical_compoundTight bindingAtomic orbitalchemistry: Physique [G04] [Physique chimie mathématiques & sciences de la terre]Tight-bindingElectronic band structureQuantum wellWurtzite crystal structuredescription
The electronic structure of wurtzite semiconductor superlattices (SLs) and quantum wells (QWs) is calculated by using the empirical tight-binding method. The basis used consists of four orbitals per atom (sp3 model), and the calculations include the spin-orbit coupling as well as the strain and electric polarization effects. We focus our study on GaN/AlN QWs wells grown both in polar (C) and nonpolar (A) directions. The band structure, wave functions and optical absorption spectrum are obtained and compared for both cases.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-03-01 |