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RESEARCH PRODUCT

Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene

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We report on the electronic properties of turbostratic graphitic microdisks, rotationally stacked systems of graphene layers, where interlayer twisting leads to electronic decoupling resulting in charge-transport properties that retain the two dimensionality of graphene, despite the presence of a large number of layers. A key fingerprint of this reduced dimensionality is the effect of weak charge-carrier localization that we observe at low temperatures. The disks' resistivity measured as a function of magnetic field changes its shape from parabolic at room temperature to linear at a temperature of 2.7 K indicating further this type of two-dimensional transport. Compared to Bernal stacked graphite, turbostratic graphene is mechanically much more robust, and it exhibits almost negligible variations of the electrical properties between samples. We demonstrate a reproducible resistivity of (3.52±0.11)×10-6 ? m, which is a particularly low value for graphitic systems. Combined with large charge-carrier mobilities demonstrated at low temperatures of up to 7×104 cm2/V s, typical for carbon-based crystalline conductors, such disks are highly interesting from a scientific point of view and, in particular, for applications where robust electronic properties are required.