6533b83afe1ef96bd12a798d
RESEARCH PRODUCT
Comparative study of initial stages of copper immersion deposition on bulk and porous silicon
Antonio VecchioneRosalba FittipaldiHanna BandarenkaSergey L PrischepaPaolo NenziMarco BalucaniVitaly Bondarenkosubject
inorganic chemicalsMaterials scienceImmersion depositionSiliconNanochemistryNanoparticlechemistry.chemical_elementNanotechnologyPorous siliconcomplex mixtureschemistry.chemical_compoundHydrofluoric acidMaterials Science(all)Porous siliconnanotechnology nanotechnology and microengineering nanoscale science and technologyGeneral Materials ScienceNano ExpressNanocrystalline silicontechnology industry and agricultureCondensed Matter Physicsequipment and suppliesCopperstomatognathic diseasesElectron backscatter diffractionChemical engineeringchemistrycopper nanoparticles; electron backscatter diffraction; immersion deposition; nanotechnology nanotechnology and microengineering nanoscale science and technology; porous siliconCopper nanoparticlesElectron backscatter diffractiondescription
Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-02-01 | Nanoscale Research Letters |