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RESEARCH PRODUCT
The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti
F. P. La MantiaS. MiraghaeiF. Di FrancoMonica SantamariaF. Di Quartosubject
Materials Chemistry2506 Metals and AlloysAmorphous semiconductorsMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryElectronic Optical and Magnetic MaterialSchottky barrierSurfaces Coatings and Film02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsMetal–semiconductor junction01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAnodeSettore ING-IND/23 - Chimica Fisica ApplicataMaterials ChemistryElectrochemistryOptoelectronics0210 nano-technologybusinessElectronic propertiesdescription
A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-01-01 | Journal of The Electrochemical Society |