6533b851fe1ef96bd12a8cb8
RESEARCH PRODUCT
UV and vacuum-UV properties of ge related centers in gamma irradiated silica
Franco Mario GelardiRoberto BoscainoMarco CannasMaurizio LeoneSimonpietro Agnellosubject
Nuclear and High Energy PhysicsRadiationMaterials sciencePhotoluminescenceExcimer lasermedicine.medical_treatmentDopingRadiochemistryAnalytical chemistryRadiationCondensed Matter PhysicsCrystallographic defectAbsorption bandmedicineGeneral Materials ScienceIrradiationExcitationdescription
Photochemical inhomogeneity in the reduction process of the optical activity related to Ge oxygen deficient point defects in silica, characterized by an absorption band centered at 5.15 v eV and two emission bands centered at 3.2 v eV and 4.3 v eV, have been investigated. We have made a comparative study of the stationary and time dependent photoluminescence under excitation in the UV (5 v eV) and in the vacuum-UV (7.4 v eV) ranges in natural silica samples with native and with n -irradiation bleached optical activity. Our measurements evidence that the same spectral features are observed in the native and in the irradiated samples, but for an intensity reduction in the irradiated ones. Moreover, the time decay of the photoluminescence at 4.3 v eV is the same independently from the irradiation of the sample. On the basis of these results it is suggested that the inhomogeneous distribution of defects is not changed by the irradiation.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-01-01 | Radiation Effects and Defects in Solids |