6533b854fe1ef96bd12af21e

RESEARCH PRODUCT

Thin Film Characterisation Using MeV Ion Beams

Timo SajavaaraKai Arstila

subject

Atomic layer depositionIon beam depositionMaterials scienceIon beam analysisIon beamIon beam mixingbusiness.industryOptoelectronicsMicroelectronicsThin filmbusinessFocused ion beam

description

This chapter focuses on the characterisation of very thin films having thicknesses from a few nanometres to tens of nanometres. The driving force for the ion beam analysis community has mostly been the rapid development of microelectronics — all the elements in new thin SiO2 replacing dielectrics, diffusion barriers, and silicide contacts need to be analysed with a depth resolution even better than a nanometre. This together with new film deposition techniques like atomic layer deposition (ALD) [1] have given a push to the ion beam analysis community to develop new and better techniques using energetic (>0.5 MeV) ion beams.

yearjournalcountryeditionlanguage
2009-01-01
https://doi.org/10.1007/978-3-642-00623-4_13