6533b855fe1ef96bd12b078b

RESEARCH PRODUCT

Full characterization of low-noise HEMTs using only noise figure measurements

A. CaddemiGiovanni MartinesM. Sannino

subject

EngineeringNoiseNoise measurementNoise-figure meterbusiness.industryAcousticsScattering parametersRange (statistics)Electronic engineeringY-factorNoise figurebusinessLow-noise amplifier

description

A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. Selection of the optimum measuring conditions, all the steps of the experimental procedure, the data collecting and processing to derive all the parameters, are fully driven by an original (unpublished) software, even without the presence of an (unskilled) operator. Results are presented about the complete characterization of a series of ten pseudomorphicHEMTs in the 8-16 GHz range. The S-parameters are also compared with those measured by an ANA.

yearjournalcountryeditionlanguage
1993-06-0141st ARFTG Conference Digest
https://doi.org/10.1109/arftg.1993.327012