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RESEARCH PRODUCT

External noise effects on the electron velocity fluctuations in semiconductors

D. Persano AdornoNicola PizzolatoBernardo Spagnolo

subject

PhysicsNoise powerCondensed Matter - Materials ScienceRandom fieldScatteringNoise spectral densityMonte Carlo methodGeneral Physics and AstronomyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesElectron velocity fluctuationNoise (electronics)Settore FIS/03 - Fisica Della MateriaComputational physicsMonte Carlo methodSemiconductor materialsSpectral densityElectric fieldElectric fieldConvection–diffusion equationElectron velocity analyzer

description

We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.

yearjournalcountryeditionlanguage
2008-01-01
https://dx.doi.org/10.48550/arxiv.0810.0995