6533b857fe1ef96bd12b3ccf
RESEARCH PRODUCT
Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions
S. LombardoFabio PrincipatoG. CannellaM. FotiC. Garozzosubject
Materials scienceCondensed matter physicsheterojunctionDopingcapacitanceAnalytical chemistryHeterojunctionamorphous siliconCapacitanceElectrical contactsSettore FIS/03 - Fisica Della MateriaEnergy(all)TCOElectrical resistivity and conductivityThin filmCurrent densityVoltageSnO2:Fdescription
Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us to determine junction parameters as doping of p-type a-Si:H, built-in potential and depletion width for the heterojunction with the smallest diameters, demonstrating that for these samples the TCO effects can be neglected. We compared theoretical and measured data to explain qualitatively the transport mechanism in this heterojunction.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-01-01 |