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RESEARCH PRODUCT

Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate

O. N. GorshkovA. V. ZdoroveyshchevA. V. KruglovBernardo SpagnoloBernardo SpagnoloAngelo CarolloM. N. KoryazhkinaDmitry FilatovA. S. NovikovAlexander A. DubkovIvan AntonovV. N. BaranovaD. A. Antonov

subject

Statistics and ProbabilityMaterials scienceDiffusionStatistical and Nonlinear Physicsbrownian motionSubstrate (printing)Diffusionstochastic particle dynamicResistive switchingfluctuation phenomenaStatistics Probability and UncertaintyComposite materialElectrical conductorYttria-stabilized zirconiaBrownian motion

description

We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.

10.1088/1742-5468/ab69ffhttp://hdl.handle.net/10447/408144