6533b857fe1ef96bd12b5175
RESEARCH PRODUCT
Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing
L. M. VäistöIlari MaasiltaP. J. Koppinensubject
SuperconductivityPhysicsCondensed Matter - Materials SciencePhysics and Astronomy (miscellaneous)Condensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsAnnealing (metallurgy)SupercurrentMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall Effect01 natural sciencesCondensed Matter::SuperconductivityMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciences010306 general physics0210 nano-technologyQuantum tunnellingdescription
We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-11-27 |