6533b858fe1ef96bd12b5581

RESEARCH PRODUCT

Fabrication and characterization of barium silicate ultrathin films as an alternative gate oxide

subject

description

Down-scaling of elementary CMOS elements requires the replacement of SiO2 as a gate oxide. By the identification of the formation conditions of barium silicate in direct contact of a silicon substrate, this study revealed a potential candidate. First of all, a reaction between Ba and SiO2 leading to the formation of barium silicate as been evidenced by in-situ XPS and SR-PES analyses. Then, barium silicate films have been elaborated by oxygen and barium co-deposition at 580 °C. Thermal treatments under vacuum showed that barium silicate was thermally stable up to 900 °C. TEM and SIMS ex-situ analyses revealed a sharp interface with the substrate. Finally, an experimental setup dedicated to MOCVD has been elaborated. It has been used to show the possibility of forming a barium silicate. The reaction is promoted by high temperature and partial oxygen pressure.