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RESEARCH PRODUCT
MOCVD growth of TiO2 thin films on single crystal GaAs substrates
M.c. Marco De LucasSylvie BourgeoisS. CollinF. Fabreguettesubject
Materials scienceScanning electron microscopeAnalytical chemistrychemistry.chemical_elementChemical vapor depositionCrystallographyCarbon filmX-ray photoelectron spectroscopychemistryMaterials ChemistryMetalorganic vapour phase epitaxyThin filmSingle crystalTitaniumdescription
Abstract TiO 2 thin films have been grown on (100)GaAs and (111)GaAs substrates by low-pressure metal organic chemical vapour deposition (LP-MOCVD). Titanium(IV) isopropoxide, Ti{OCH(CH 3 ) 2 } 4 , was used as a precursor and TiO 2 films were obtained without an additional oxygen flux. Scanning electron microscopy (SEM) experiments have shown a well ordered rod-like crystallisation in the films grown on (100)GaAs. This ordered crystallisation was favoured by a high deposition temperature ( T d =700°C). By contrast, no distinct order was observed in the films grown on (111)GaAs substrates. X-ray diffraction patterns revealed a mainly rutile structure for the TiO 2 films deposited on (100)GaAs at 700°C. XPS results confirmed the TiO 2 stoichiometry of the surface of the films and revealed the presence of C, Ga and As as impurities.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-06-01 | International Journal of Inorganic Materials |