6533b85bfe1ef96bd12ba958

RESEARCH PRODUCT

TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

B. PolskyA. ShurE. LyumkisP. Visocky

subject

Energy balance equationMaterials sciencebusiness.industryApplied MathematicsNumerical analysisTransistorSemiconductor deviceComputer Science Applicationslaw.inventionComputational Theory and MathematicslawElectronic engineeringOptoelectronicsTransient (oscillation)Electrical and Electronic Engineeringbusiness

description

An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.

https://doi.org/10.1108/eb010094