6533b85bfe1ef96bd12ba958
RESEARCH PRODUCT
TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
B. PolskyA. ShurE. LyumkisP. Visockysubject
Energy balance equationMaterials sciencebusiness.industryApplied MathematicsNumerical analysisTransistorSemiconductor deviceComputer Science Applicationslaw.inventionComputational Theory and MathematicslawElectronic engineeringOptoelectronicsTransient (oscillation)Electrical and Electronic Engineeringbusinessdescription
An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.
year | journal | country | edition | language |
---|---|---|---|---|
1992-02-01 | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |