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RESEARCH PRODUCT
Skewness and kurtosis of 1/f noise in semiconductor devices
Gaetano FerranteFabio Principatosubject
Noise powerNoise spectral densityShot noiseCondensed Matter PhysicsNoise (electronics)Atomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsComputational physicssymbols.namesakeAdditive white Gaussian noiseGaussian noiseSkewnessStatisticssymbolsKurtosisElectrical and Electronic EngineeringSafety Risk Reliability and QualityMathematicsdescription
An experimental investigation of the third and fourth moments of the 1/f noise of two different electronic devices is reported. The skewness and the kurtosis of the noise voltage data are estimated. Although the devices under investigation have similar noise power spectral density, the time waveforms are shown to have slightly different statistical properties. In both cases, a small deviation from Gaussian distribution is observed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-11-01 |