6533b860fe1ef96bd12c379d
RESEARCH PRODUCT
Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
Daniel ErrandoneaDaniel ErrandoneaAlfredo SeguraFrancisco Javier ManjónA. Chevysubject
Condensed matter physicsDeep levelChemistryHydrostatic pressureDopingElectronCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceElectron transferImpurityMaterials ChemistryElectrical and Electronic EngineeringConduction bandAmbient pressuredescription
We have investigated the temperature dependence of the transport parameters of Sn-doped InSe at different pressures, up to 2.5 GPa. A noticeable change in the temperature dependence of all the transport parameters has been observed above 1.2 GPa. This fact is explained by assuming the transformation of Sn shallow donors into deep donors at a hydrostatic pressure of 1.1 GPa, and by taking into account the transfer of electrons from the absolute minimum to higher energy minima in the conduction band. At ambient pressure, the position of the Sn deep level is estimated to lie 75 ± 20 meV above the absolute conduction-band minimum.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-02-10 | Semiconductor Science and Technology |