6533b861fe1ef96bd12c5a46

RESEARCH PRODUCT

Modeling of low-noise microwave HEMTs for CAD-oriented applications

M. SanninoAlina Caddemi

subject

Low-noiseEngineeringbusiness.industryGeneral EngineeringCircuit modelingnoise parametersCADMicrowave; Circuit modeling; Low-noise; HEMT; noise parametersNoise figureLow noiseNoiseScattering parametersDecomposition (computer science)Electronic engineeringEquivalent circuitbusinessMicrowaveMicrowaveHEMT

description

The simultaneous determination of noise, gain and scattering parameters through a computer-driven noise figure measuring system allowed the rapid and accurate characterization of several samples of low noise HEMTs of the same family. From the measured parameters an equivalent circuit model representing the behavior of the typical device is extracted by means of a decomposition approach. Comparison between the model performance and the set of measured parameters of all devices are reported for the FHR 02FH (by Fujitsu). The modeling procedure is mainly oriented to the CAD of (M)MIC low noise wideband amplifiers. © 1993 John Wiley & Sons, Inc.

yearjournalcountryeditionlanguage
1993-01-01
10.1002/mmce.4570030106http://hdl.handle.net/11570/2176421