6533b861fe1ef96bd12c5aa8
RESEARCH PRODUCT
Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells
Marc IlegemsRaphaël ButtéEric FeltinMauro MoscaMaria TchernychevaF. H. JulienJ.-f. CarlinLaurent NevouNicolas GrandjeanSylvain Nicolaysubject
GaN/AlN quantumPhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsWide-bandgap semiconductorGallium nitridequantum dotsGallium nitrideMolecular physicsCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryQuantum dotExcited stateGround stateQuantum wellMolecular beam epitaxydescription
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density structures dedicated to intersubband devices in the 2-4 μm wavelength range.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-09-12 |