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RESEARCH PRODUCT
Perovskite-Perovskite Homojunctions via Compositional Doping.
Michele SessoloRobert LovrincicPablo P. BoixBenedikt DänekampHenk J. BolinkMichael SendnerChristian Müllersubject
Materials sciencebusiness.industryDopingInfrared spectroscopy02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesSemiconductorVacuum depositionOptoelectronicsGeneral Materials SciencePhysical and Theoretical ChemistryThin filmHomojunction0210 nano-technologybusinessVolta potentialPerovskite (structure)description
One of the most important properties of semiconductors is the possibility of controlling their electronic behavior via intentional doping. Despite the unprecedented progress in the understanding of hybrid metal halide perovskites, extrinsic doping of perovskite remains nearly unexplored and perovskite–perovskite homojunctions have not been reported. Here we present a perovskite–perovskite homojunction obtained by vacuum deposition of stoichiometrically tuned methylammonium lead iodide (MAPI) films. Doping is realized by adjusting the relative deposition rates of MAI and PbI2, obtaining p-type (MAI excess) and n-type (MAI defect) MAPI. The successful stoichiometry change in the thin films is confirmed by infrared spectroscopy, which allows us to determine the MA content in the films. We analyzed the resulting thin-film junction by cross-sectional scanning Kelvin probe microscopy (SKPM) and found a contact potential difference (CPD) of 250 mV between the two differently doped perovskite layers. Planar diode...
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-05-10 | The journal of physical chemistry letters |