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RESEARCH PRODUCT
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
Pedro J. MartinezD. GilabertEsteban Sanchis-kildersEnrique Masetsubject
010302 applied physicsMaterials sciencebusiness.industryTransistorElectrical breakdownAlgan gan02 engineering and technologyTrappingConverters021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic Materialslaw.inventionDynamic resistancelaw0103 physical sciencesMaterials ChemistryOptoelectronicsElectronicsElectrical and Electronic Engineering0210 nano-technologybusinessSaturation (magnetic)description
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-09-24 | Semiconductor Science and Technology |