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RESEARCH PRODUCT

Presentation of the DSIP method for study of recrystallization process in subsurface zone induced by sandblasting

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In the paper we demonstrate the application of the positron annihilation experimental technique based on the scan of the positron implantation profile for observation of the recrystallization process in the subsurface zone (SZ). The SZ was created in the copper sample whose surface was exposed to a sandblasting treatment and then annealed at different temperatures. Application of 68Ge/68Ga positron source allows us to scan the depth of c.a. 150 μm. It was found that recrystallization goes faster close to the surface than in deeper regions. The complete rebuilding of the microstructure takes place at temperature of 600 °C. Some changes in the defect structure begin at temperature of 300 °C.