6533b86efe1ef96bd12cc7ec

RESEARCH PRODUCT

Variability of the Si-O-Si angle in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy

Franco Mario GelardiGianpiero BuscarinoSimonpietro AgnelloG. Vaccaro

subject

Raman scatteringMaterials Chemistry2506 Metals and AlloysAnalytical chemistryRadiation effectCeramics and CompositeCondensed Matter Physiclaw.inventionsymbols.namesakelawElectron spin resonanceMaterials Chemistryamorphous silica structureCoherent anti-Stokes Raman spectroscopyElectron paramagnetic resonanceHyperfine structureRadiationChemistryElectronic Optical and Magnetic MaterialSettore FIS/01 - Fisica SperimentaleSilicaCondensed Matter PhysicsRaman scattering Microwave Radiation effects Magnetic properties Raman spectroscopy Silica Radiation Electron spin resonance DefectsElectronic Optical and Magnetic MaterialsAmorphous solidMolecular geometryRaman spectroscopyCeramics and CompositessymbolsMagnetic propertieDefectRaman spectroscopyMicrowaveRaman scatteringMicrowave

description

We report an experimental investigation by electron paramagnetic resonance (EPR) and Raman spectroscopy on a variety of amorphous silicon dioxide materials. Our study by EPR have permitted us to point out that the splitting of the primary hyperfine doublet of the Eγ′ center shows a relevant sample-to-sample variability, changing from ∼41.8 to ∼42.6 mT in the set of materials we considered. The parallel study by Raman spectroscopy has enabled us to state that this variability is attributable to the different Si-O-Si angle characterizing the matrices of the different materials. © 2009 Elsevier B.V. All rights reserved.

yearjournalcountryeditionlanguage
2009-01-01
10.1016/j.jnoncrysol.2008.12.017http://hdl.handle.net/10281/123871