6533b871fe1ef96bd12d2575

RESEARCH PRODUCT

A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites

C. M. AndreouA. PaccagnellaD. M. Gonzalez-castanoF. GomezV. LiberaliA. V. ProkofievC. CalligaroA. JavanainenA. VirtanenD. NahmadJ. GeorgiouC. M. AndreouA. PaccagnellaD. M. Gonzalez-castanoF. GomezV. LiberaliA. V. ProkofievC. CalligaroA. JavanainenA. VirtanenD. NahmadJ. Georgiou

subject

Materials scienceta213voltage referencesBandgap voltage referenceSubthreshold conductionbusiness.industryCMOSVoltage dividerElectrical engineeringlaw.inventionThreshold voltagesatellitesReference circuitCMOSlawcomplementary metal–oxide–semiconductorsResistorbusinessradiation hardeningVoltage reference

description

A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18μm standard CMOS technology and occupies a silicon area of 0.039mm2. The proposed voltage reference is suitable for high-precision and low-power space applications.

yearjournalcountryeditionlanguage
2015-05-012015 IEEE International Symposium on Circuits and Systems (ISCAS)
https://doi.org/10.1109/iscas.2015.7169129