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RESEARCH PRODUCT
Infrared detection in multifunctional graphene-based transistors
Marco Angelo GiambraAntonio BenfanteRiccardo PerniceSalvatore StivalaEnrico CalandraAlessandro BusaccaW. H. P PerniceR. Danneausubject
Graphene Graphene Field Effect Transistors Graphene infrared photodetectorsdescription
In the last years great attention has been paid to graphene-based devices for optoelectronic applications such as photodetection. In this work, we report on Graphene Field Effect Transistors (GFETs) photoelectrical response due to the photo-transistor effect. Photoelectrical measurements were performed using a 1.55 μm erbium fiber laser. Optical measurements as a function of both the incident laser power and the DC bias of the fabricated devices have been carried out and show that photocurrent increases with the power of the IR beam illuminating the sample.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-01-01 |