Search results for " Amorphous silicon"
showing 5 items of 15 documents
Metal displacement deposition: a new method to grow amorphous silicon nanotubes
2013
EPR investigation on the polyamorphic transformation induced by electron irradiation in SiO2 glass
2013
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
2010
The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…
Simulation studies of electronic transport in a-Si:H thin film solar cells
2009
The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.