Search results for " CAD"

showing 10 items of 211 documents

Madrid Distrito de la Universidad

Data de publicació presa de la bibliografia. - Orientat amb fletxa. - Relleu representat per corbes de nivell amb equidistància de 5 m Al cantó superior esquerre: Poligonación. Parcelario urbano

Mapes cadastrals Madrid (Madrid) S. XIX
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Madrid Distrito de Palacio

Data de publicació presa de la bibliografia. - Orientat amb fletxa. - Relleu representat per corbes de nivell amb equidistància de 5 m. - Interior de les illes en ocre Al cantó superior esquerre: Poligonación. Parcelario urbano

Mapes cadastrals Madrid (Madrid) S. XIX
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Madrid Parcelario urbano : hojas kilométricas A3, A4, B3, B4, B5, C3 y C4 : Distrito de Buenavista : Manzanas Nº 329, 280 y 281

Orientat amb fletxa. - Relleu representat per normals i corbes de nivell

Mapes cadastrals Madrid (Madrid) S. XIX
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Madrid Distrito del Congreso

Orientat amb fletxa. - Relleu representat per corbes de nivell amb equidistància de 5 m Al cantó superior esquerre: Poligonación. Parcelario urbano

Mapes cadastrals Madrid (Madrid) S. XIX
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Madrid Distrito de Buena Vista

Data de publicació presa de la bibliografia. - Orientat amb fletxa. - Relleu representat per corbes de nivell amb equidistància de 5 m. - Interior de les illes en ocre Al cantó superior esquerre: Poligonación. Parcelario urbano

Mapes cadastrals Madrid (Madrid) S. XIX
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Madrid Distrito de la Inclusa

Data de publicació presa de la bibliografia. - Orientat amb fletxa. - Relleu representat per corbes de nivell amb equidistància de 5 m. - Interior de les illes en ocre Al cantó superior esquerre: Poligonación. Parcelario urbano

Mapes cadastrals Madrid (Madrid) S. XIX
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Madrid Distrito de La Latina

Data de publicació presa de la bibliografia. - Orientat amb fletxa. - Relleu representat per corbes de nivell amb equidistància de 5 m. - Interior de les illes en ocre Al cantó superior esquerre: Poligonación. Parcelario urbano

Mapes cadastrals Madrid (Madrid) S. XIX
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A critical approach to the toxic metal ion removal by hazelnut and almond shells

2018

The adsorption capacity of ground hazelnut (HS) and almond (AS) shells towards Pb(II) and Cd(II) has been studied at pH = 5, in NaNO3 and NaCl ionic media, in the ionic strength range 0.05-0.5 mol L-1. Kinetic and equilibrium experiments were carried out by using the Differential Pulse Anodic Stripping Voltammetry technique to check the amount of the metal ion removed by HS and AS materials. Different kinetic and equilibrium equations were used to fit experimental data and a statistical study was done to establish the suitable model for the data fitting. A speciation study of the metal ions in solution was also done in order to evaluate the influence of the ionic medium on the adsorption pr…

Materials scienceHealth Toxicology and MutagenesisMetal ions in aqueous solutionHazelnut shellInorganic chemistryVoltammetry.Ionic bonding02 engineering and technology010501 environmental sciences01 natural sciencesIonMetalCorylusAdsorptionSpectroscopy Fourier Transform InfraredAlmond shellNutsEnvironmental ChemistrySettore CHIM/01 - Chimica AnaliticaLead(II)VoltammetryEnvironmental Restoration and Remediation0105 earth and related environmental sciencesSettore CHIM/02 - Chimica FisicaIonsWaste managementOsmolar ConcentrationGeneral MedicineHydrogen-Ion Concentration021001 nanoscience & nanotechnologyPrunus dulcisPollutionAnodic stripping voltammetryMetalsIonic strengthvisual_artvisual_art.visual_art_mediumVoltammetryAdsorptionCadmium(II)0210 nano-technologyWater Pollutants ChemicalAdsorption; Almond shells; Cadmium(II); Hazelnut shells; Lead(II); Voltammetry; Environmental Chemistry; Pollution; Health Toxicology and MutagenesisCadmium
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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
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Proactive design and formalization of related spatiotemporal knowledge : application to assembly process and additive manufacturing with smart materi…

2019

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MéréotopologieMatériaux intelligentsProactive designFabrication additiveVoxelOntologyAdditive manufacturing[SPI] Engineering Sciences [physics]Smart materialsOntologie4D printingPLMMereotopologyConception proactiveImpression 4D[SPI.MECA.GEME]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanical engineering [physics.class-ph][SPI]Engineering Sciences [physics]Advanved CADCAO avancéeVoxels[SPI.MECA.GEME] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanical engineering [physics.class-ph]
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