Search results for " CMOS"

showing 8 items of 18 documents

MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade

2018

Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…

PhysicsActive pixel sensors ; CMOS integrated circuits ; position sensitive particle detectors ; radiation effects ; radiation hardening (electronics) ; semiconductor detectors ; solid state circuit designPixelPhysics::Instrumentation and Detectors010308 nuclear & particles physicsbusiness.industryDetectorHigh Luminosity Large Hadron Collider01 natural sciencesCapacitance030218 nuclear medicine & medical imagingSemiconductor detector03 medical and health sciences0302 clinical medicineCMOSNuclear electronics0103 physical sciencesbusinessRadiation hardeningComputer hardware
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A Design Methodology for Low-Power MCML Ring Oscillators

2007

In this paper, a low-power design method for MCML based ring oscillators is presented. The proposed method takes into account the parasitic capacitances of the MOS transistors. To validate it, some ring oscillators with different oscillation frequencies were designed in a 0.18 mum CMOS technology. SPICE simulations demonstrate the effectiveness of the design method.

Ring (mathematics)EngineeringDesign methodology Ring oscillators Inverters Circuits Frequency Parasitic capacitance CMOS technology Propagation delay Voltage Telecommunicationsbusiness.industryTransistorSpiceElectrical engineeringHardware_PERFORMANCEANDRELIABILITYIntegrated circuit designSettore ING-INF/01 - ElettronicaComputer Science::Otherlaw.inventionPower (physics)Computer Science::Hardware ArchitectureComputer Science::Emerging TechnologiesCMOSlawLow-power electronicsMOSFETHardware_INTEGRATEDCIRCUITSElectronic engineeringbusinessHardware_LOGICDESIGN
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Gamma-ray irradiation tests on CCD and CMOS sensors used in imaging techniques

2012

Technologically-enhanced electronic devices are used in various fields as space imaging or diagnostic techniques in medicine. The devices can be exposed to intense radiation fluxes over time which may impair the functioning of the same apparatus, in particular in space applications. In this paper we report the results of a gamma irradiation tests on imaging sensors simulating the space radiation over a long time period. Two types of sensors are taken into consideration: CCD (Charge-Coupled Device) sensors and CMOS based on technology MOS (Metal Oxide semiconductor) used for the realization of transistors widely used in consumer electronics. The devices are supplied by Techno System (Italy),…

Settore ING-IND/20 - Misure E Strumentazione NucleariImaging techniques CCD CMOS Gamma irradiation.Settore ING-INF/01 - Elettronica
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Compression embarquée temps réel pour caméras rapides

2005

Les caméras rapides sont de puissants outils pour étudier, par exemple, la dynamique des fluides ou le déplacement des pièces mécaniques lors d'un processus de fabrication. Nous décrivons dans ce papier, un nouveau type de caméra rapide possédant un fonctionnement original. En effet, outre le fait qu'elle utilise comme d'autres caméras, la grande flexibilité des capteurs CMOS en termes d'acquisition (ROI), elle est novatrice au niveau du transfert des données. Celles-ci pouvant être à la fois traitées et/ou compressées en temps réel au sein même de la caméra. Le transfert peut s'effectuer alors à l'aide d'une simple connection série de type USB 2.0. On réalise ainsi l'économie d'une mémoire…

[INFO.INFO-OH] Computer Science [cs]/Other [cs.OH]Capteur CMOSCompression d'image[INFO.INFO-OH]Computer Science [cs]/Other [cs.OH][ INFO.INFO-OH ] Computer Science [cs]/Other [cs.OH]compression d'imagestemps réelFPGAVidéo rapide
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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

2016

An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…

mikroelektroniikkaNuclear and High Energy PhysicsBandgap voltage referencecircuit topologysingle-event transient (SET)Integrated circuit01 natural scienceslaw.inventionsingle event transientsCurrent mirrorlawpulse quenchingsingle-event effects (SEE)ionizationradiation hardening by design (RHBD)0103 physical sciencesElectronic engineeringMicroelectronicsAnalog single-event transient (ASET); bandgap voltage reference (BGR); charge sharing; CMOS analog integrated circuits; heavy ion; ionization; parasitic bipolar effect; pulse quenching; radiation effects; radiation hardening by design (RHBD); reference circuits; single-event effects (SEE); single-event transient (SET); space electronics; Voltage reference; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic EngineeringAnalog single-event transient (ASET)Electrical and Electronic Engineeringparasitic bipolar effectreference voltage010302 applied physicsPhysicsbandgap voltage reference (BGR)charge sharingta114ta213010308 nuclear & particles physicsbusiness.industryanalog integrated circuitsTransistorspace electronicsPulse durationheavy ionPulse (physics)Voltage referenceNuclear Energy and EngineeringPulse-amplitude modulationreference circuitsmicroelectronicsradiation effectsspace applicationsOptoelectronicsbusinessCMOS analog integrated circuitsIEEE Transactions on Nuclear Science
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Calibration of the underground muon detector of the Pierre Auger Observatory

2021

To obtain direct measurements of the muon content of extensive air showers with energy above $10^{16.5}$ eV, the Pierre Auger Observatory is currently being equipped with an underground muon detector (UMD), consisting of 219 10 $\mathrm{m^2}$-modules, each segmented into 64 scintillators coupled to silicon photomultipliers (SiPMs). Direct access to the shower muon content allows for the study of both of the composition of primary cosmic rays and of high-energy hadronic interactions in the forward direction. As the muon density can vary between tens of muons per m$^2$ close to the intersection of the shower axis with the ground to much less than one per m$^2$ when far away, the necessary bro…

muon: showersdata acquisitionPhysics::Instrumentation and DetectorsAstronomyDetector alignment and calibration methods (lasers sources particle-beams)primary [cosmic radiation]Particle detectors7. Clean energy01 natural sciencesEtc)030218 nuclear medicine & medical imaging0302 clinical medicinecalibration [detector]ObservatoryAPDsdetector: calibrationatmosphere [muon]InstrumentationPhoton detectors for UVshowers [muon]Mathematical PhysicsPhoton detectors for UV visible and IR photons (solid-state) (PIN diodes APDsSi-PMTs G-APDs CCDs EBCCDs EMCCDs CMOS imagers etc)Particle-beams)Physicsenergy: highdetector [muon]EBCCDsPhysicselectronicsSettore FIS/01 - Fisica SperimentalePhoton detectors for UV visible and IR photons (solid-state) (PIN diodes APDs Si-PMTs G-APDs CCDs EBCCDs EMCCDs CMOS imagers etc)Astrophysics::Instrumentation and Methods for AstrophysicsSourcesSi-PMTsdetector: alignmentAugermuon: atmosphereobservatorydensity [muon]G-APDshigh [energy]Particle detectorAstrophysics - Instrumentation and Methods for Astrophysicsatmosphere [showers]Detector alignment and calibration methods (lasers sourcesparticle-beams)FOS: Physical sciencesCosmic rayScintillatorParticle detectorVisible and IR photons (solid-state) (PIN diodes03 medical and health sciencesOpticsSilicon photomultipliermuon: density0103 physical sciencesCalibrationddc:530photomultiplier: silicon[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]ddc:610High Energy PhysicsCMOS imagersInstrumentation and Methods for Astrophysics (astro-ph.IM)scintillation counterParticle detectors; Detector alignment and calibration methods (lasers sources particle-beams); Photon detectors for UV visible and IR photons (solid-state) (PIN diodes APDs Si-PMTs G-APDs CCDs EBCCDs EMCCDs CMOS imagers etc); Performance of High Energy Physics DetectorsPierre Auger ObservatoryMuonshowers: atmosphere010308 nuclear & particles physicsbusiness.industrymuon: detectorCCDscosmic radiation: primaryDetector alignment and calibration methods (lasersEMCCDsanalog-to-digital converterAPDs; CCDs; CMOS imagers; Detector alignment and calibration methods (lasers; EBCCDs; EMCCDs; Etc); G-APDs; Particle detectors; Particle-beams); Performance of High Energy Physics Detectors; Photon detectors for UV; Si-PMTs; Sources; Visible and IR photons (solid-state) (PIN diodesExperimental High Energy Physicssilicon [photomultiplier]Performance of High Energy Physics DetectorsHigh Energy Physics::Experimentphoton: detectorbusinessalignment [detector]RAIOS CÓSMICOSdetector [photon]astro-ph.IM
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Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes

2020

The development of radiation hard Depleted Monolithic Active Pixel Sensors (DMAPS) targets the replacement of hybrid pixel detectors to meet radiation hardness requirements of at least 1.5e16 1 MeV neq/cm2 for the HL-LHC and beyond. DMAPS were designed and tested in the TJ180 nm TowerJazz CMOS imaging technology with small electrodes pixel designs. This technology reduces costs and provides granularity of 36.4x36.4 um2 with low power operation (1 uW/pixel), low noise of ENC < 20 e-, a small collection electrode (3 um) and fast signal response within 25 ns bunch crossing. This contribution will present the latest developments after the MALTA and Mini-MALTA sensors. It will illustrate the imp…

noiseParticle tracking detectors ; Radiation-hard detectors ; Electronic detector readout concepts ; CMOS sensors ; Monolithic active pixel sensorsMaterials science010308 nuclear & particles physicsbusiness.industryintegrated circuitelectrode01 natural sciencesCMOSRadiation toleranceefficiency0103 physical sciencesElectrodeHardware_INTEGRATEDCIRCUITSelectronics: readoutOptoelectronicssemiconductor detector[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]Detectors and Experimental Techniquescontrol system010306 general physicsbusiness
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Conception en technologie CMOS d'un Système de Vision dédié à l'Imagerie Rapide et aux Traitements d'Images

2008

Our work presented in this thesis focuses on the design, testing and implementation of monolithics CMOS image smart sensors : The principle, performance and limitations. The hardware implementation of a vision smart system is the central link. HISIC is High Speed Image Capture with processing at pixel level. An experimental platform for instrumentation and evaluation of retina operators was conducted during this thesis. After a state of the smart sensors and CMOS retinas, the second part is dedicated to the study and design of the pixel image sensor HISIC. Two circuits were realized in CMOS technology. The first identied a new type of photo-detector, and the second, to create a prototype em…

vision artificielleimagerie rapiderecongurabilityprogrammability[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronicsparallélisme massifspeed imagingSystème embarquéartificial vision.image processing on focal planerecongurabilitéprogrammabilitéstandard CMOS technology[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsEmbedded systemtraitements d'images sur plan focalmassive paralleltechnologie standard CMOS
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