Search results for " Capa"

showing 10 items of 1248 documents

The Influence of Thermal Treatment on the Electronic Properties of a-Nb2O5

2009

The effect of thermal treatments for 1h at 250{degree sign}C in air or under vacuum on the electronic structure of thick amorphous anodic niobia was characterized by electrochemical impedance, differential admittance (DA) and photocurrent spectroscopy (PCS). The analysis of anodized niobia has revealed that it behaves as a pure dielectric. The thermal treatment in air increases the value of the differential capacitance of the niobia sample. The effect is stronger when the thermal treatment is carried out in vacuum and can be cancelled out by reanodizing the oxide to the initial formation potential. In the case of thermally vacuum-treated sample, a behavior typical of semiconducting amorphou…

PhotocurrentAdmittanceMaterials scienceDifferential capacitanceBand gapAnalytical chemistryOxideThermal treatmentDielectricThermal Treatment Electronic Properties a-Nb2O5Amorphous solidchemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica ApplicatachemistryNb2O5 anodic oxide electronic properties
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Photoelectrochemical characterization of amorphous anodic films on Ti-6at.%Si

2013

Abstract The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti–6at.%Si alloys were studied as a function of the formation voltage (5–40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO 2 . The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The…

PhotocurrentMaterials scienceDifferential capacitanceBand gapGeneral Chemical EngineeringAnalytical chemistryInsulator (electricity)DielectricAnodeAmorphous solidSettore ING-IND/23 - Chimica Fisica ApplicataElectrochemistryPhotoelectrochemical characterization amorphous anodic films Ti-6at.%SiElectrode potential
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Band gap narrowing and dielectric constant enhancement of (NbxTa(1-x))2O5 by electrochemical nitrogen doping

2018

Abstract Anodic films were grown to 5 V and 50 V on Nb, Ta and Ta-Nb sputtering deposited alloys in 0.1 M ammonium biborate solutions in order to induce N incorporation. Their properties were compared to those of N free anodic films grown to the same formation voltages in 0.1 M NaOH. Photoelectrochemical measurements evidenced the presence of optical transitions at energy lower than the band gap of the oxides, attributed to localized states located close to the valence band mobility edge of the films, generated by N 2p orbitals, with consequent narrowing of the band gap. Since N incorporation occurs in the outer 70% of the anodic films, the dependence of the measured photocurrent as a funct…

PhotocurrentMaterials scienceDifferential capacitanceBand gapGeneral Chemical EngineeringDopingAnalytical chemistry02 engineering and technologyDielectricPhoton energy010402 general chemistry021001 nanoscience & nanotechnologyElectrochemistry01 natural sciences0104 chemical sciencesSettore ING-IND/23 - Chimica Fisica ApplicataSputteringElectrochemistryChemical Engineering (all)0210 nano-technologyElectrochimica Acta
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Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

2013

We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…

PhotocurrentMaterials scienceDifferential capacitanceZinc Oxide doping Hall effect Photoelectrochemistry C-V measurementsbusiness.industryAnnealing (metallurgy)PhotoconductivityDopingGeneral Physics and AstronomySettore ING-INF/01 - ElettronicaPulsed laser depositionSettore ING-IND/23 - Chimica Fisica ApplicataSemiconductorHall effectOptoelectronicsbusinessJournal of Applied Physics
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Teleportation-induced correlated quantum channels.

2009

Quantum teleportation of a n-qubit state performed using as entangled resource a general bipartite state of 2n qubits instead of n Bell states is equivalent to a correlated Pauli channel. This provides a new characterization of such channels in terms of many-body correlation functions of the teleporting media. Our model is then generalized to the Continuous Variable case. We show that this new representation provides a relatively simple method for determining whether a correlated quantum channel is able to reliably convey quantum messages by studying the entanglement properties of the teleportation mediating system.

PhysicsBell stateQuantum PhysicsFOS: Physical sciencesGeneral Physics and AstronomyQuantum entanglementQuantum channelQuantum capacityQuantum Physics01 natural sciences010305 fluids & plasmasComputer Science::Emerging TechnologiesQuantum mechanicsQubit0103 physical sciencesquantum information theoryquantum channelsQuantum informationQuantum Physics (quant-ph)010306 general physicsAmplitude damping channelQuantum teleportationPhysical review letters
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Structure-property relations in the distorted ordered double perovskite Sr2InReO6

2011

The rock-salt ordered type double perovskite Sr${}_{2}$InReO${}_{6}$ is systematically investigated by means of powder x-ray diffraction, neutron powder diffraction, temperature-dependent electrical transport, heat capacity and magnetic susceptibility measurements, and electronic band structure calculations. The crystal structure of Sr${}_{2}$InReO${}_{6}$ is revised to be monoclinic (cryolite structure type, space group $P$2${}_{1}$/$n$) with all structural distortions according to the high-symmetry aristotype due to tilting of the InO${}_{6}$ and ReO${}_{6}$ octahedra, respectively. Sr${}_{2}$InReO${}_{6}$ is a Mott insulator with variable-range hopping. Two 5$d$ electrons are unpaired an…

PhysicsCondensed matter physicsAntiferromagnetismElectronic structureCrystal structureType (model theory)Condensed Matter PhysicsElectronic band structureMagnetic susceptibilityHeat capacityElectronic Optical and Magnetic MaterialsMonoclinic crystal systemPhysical Review B
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Transition behavior in the channel capacity of two-quibit channels with memory

2004

We prove that a general upper bound on the maximal mutual information of quantum channels is saturated in the case of Pauli channels with an arbitrary degree of memory. For a subset of such channels we explicitly identify the optimal signal states. We show analytically that for such a class of channels entangled states are indeed optimal above a given memory threshold.

PhysicsData_CODINGANDINFORMATIONTHEORYCoherent informationQuantum channelQuantum capacityTopologyUpper and lower boundsAtomic and Molecular Physics and OpticsClassical capacityQuantum mechanicsQuantum informationAmplitude damping channelQuantum mutual informationComputer Science::Information Theory
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On the design of a multiple-output DC/DC converter for the PHI experiment on-board of solar orbiter

2013

Power converters for experiments that have to fly on board space missions (satellite, launchers, etc.) have very stringent requirements due to its use in a very harsh environment. The selection of a suitable topology is therefore not only based on standard requirements but additional more strict ones have also to be fulfilled. This work shows the design procedure followed to build the Power Converter Module (PCM) for the Polarimetric and Helioseismic Imager (SO/PHI), experiment on board the Solar Orbiter Satellite. The selected topology has been a Push-Pull, for a power level of approximately 35 W and with seven output voltages. Galvanic isolation is needed from primary to secondary, but no…

PhysicsForward converterbusiness.industryElectrical engineeringTopology (electrical circuits)ConvertersInductorPower (physics)law.inventionOrbiterParasitic capacitancelawElectronic engineeringbusinessGalvanic isolation2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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The relative role of EUV radiation and X-rays in the heating of hydrogen-rich exoplanet atmospheres

2009

Aims. We study the relative role of EUV and X-ray radiation in the heating of hydrogen-rich planet atmospheres with different composition and electron content. Methods. An accurate photo-ionization model has been used to follow the primary photo-electron energy deposition throughout the atmosphere. Results. Heating rates and efficiencies have been computed, together with column density cut-offs at which photons of given energies stop their heating production inside the atmosphere. Assuming 100 eV as the energy borderline between the extreme ultraviolet spectral range and X-rays we find that when the absorbing hydrogen column density is higher than 10 20 cm −2 only X-rays can heat the gas. E…

PhysicsHydrogenchemistry.chemical_elementAstronomy and AstrophysicsAstrophysicsRadiationExoplanetHeat capacity rateAtmosphereAtmosphere of EarthchemistrySpace and Planetary ScienceExtreme ultravioletAstrophysics::Solar and Stellar AstrophysicsAstrophysics::Earth and Planetary AstrophysicsEmission spectrumAstronomy & Astrophysics
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A cylindrical GEM detector with analog readout for the BESIII experiment

2016

Abstract A cylindrical GEM detector with analog readout is under development for the upgrade of the Inner Tracker of the BESIII experiment at IHEP (Beijing). The new detector will match the requirements for momentum resolution ( σ pt / p t ~ 0.5 % at 1 GeV) and radial resolution ( σ xy ~ 120 μ m ) of the existing drift chamber and will improve significantly the spatial resolution along the beam direction ( σ z ~ 150 μ m ) with very small material budget (less than 1.5% of X 0 ). With respect to the state of the art the following innovations will be deployed: a lighter mechanical structure based on Rohacell, a new XV anode readout plane with jagged strip layout to reduce the parasitic capaci…

PhysicsNuclear and High Energy PhysicsGEMBESIII experiment; GEM; Micro-pattern gas detectors; Tracking detectorsPhysics::Instrumentation and Detectors010308 nuclear & particles physicsInstrumentationDetectorResolution (electron density)BESIII experimentMicro-pattern gas detectors01 natural sciencesMagnetic fieldAnodeNuclear physicsMomentumTracking detectorsParasitic capacitance0103 physical sciencesBESIII experiment; GEM; Micro-pattern gas detectors; Tracking detectors; Nuclear and High Energy Physics; Instrumentation010306 general physicsInstrumentationImage resolutionNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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