Search results for " III"

showing 10 items of 562 documents

Differentiation between major and minor depression

1992

Though the concept of Major Depression was generated by clinicians using depressed inpatients as models, a polydiagnostic study in 600 psychiatric inpatients with heterogenous psychological disturbances revealed that all six competing operational definitions of Major Depression (including DSM-III-R and ICD-10) were too restrictive to serve as a general concept of depression. Another polydiagnostic study in 500 primary care outpatients showed that more than two-thirds of all non-chronic depressed cases were below the severity threshold of Major Depression: these patients are classified as Depression Not Otherwise Specified (NOS) by DSM-III-R. Loosening of the over-restrictive time criteria w…

PharmacologyDepressive Disordermedicine.medical_specialtyHamilton depression scaleDepressionMajor and minorNot Otherwise SpecifiedDsm iii rICD-10Primary careDiagnosis DifferentialmedicineHumansAntidepressantPsychiatryPsychologyDepression (differential diagnoses)Clinical psychologyPsychopharmacology
researchProduct

Therapeutic effect of enhancing endothelial nitric oxide synthase (eNOS) expression and preventing eNOS uncoupling

2011

Nitric oxide (NO) produced by the endothelium is an important protective molecule in the vasculature. It is generated by the enzyme endothelial NO synthase (eNOS). Similar to all NOS isoforms, functional eNOS transfers electrons from nicotinamide adenine dinucleotide phosphate (NADPH), via the flavins flavin adenine dinucleotide and flavin mononucleotide in the carboxy-terminal reductase domain, to the heme in the amino-terminal oxygenase domain. Here, the substrate L-arginine is oxidized to L-citrulline and NO. Cardiovascular risk factors such as diabetes mellitus, hypertension, hypercholesterolaemia or cigarette smoking reduce bioactive NO. These risk factors lead to an enhanced productio…

PharmacologyFlavin adenine dinucleotideNADPH oxidasebiologyNitric Oxide Synthase Type IIIbiology.organism_classificationCofactorNitric oxidechemistry.chemical_compoundBiochemistrychemistryEnosbiology.proteinPeroxynitriteNicotinamide adenine dinucleotide phosphateBritish Journal of Pharmacology
researchProduct

Uncoupling of endothelial NO synthase in atherosclerosis and vascular disease.

2013

Nitric oxide (NO) produced by the endothelial NO synthase (eNOS) is an antihypertensive, antithrombotic and anti-atherosclerotic molecule. Hypercholesterolemia leads to a reduction in vascular NO bioavailability. This is attributed to a dysfunction of the eNOS enzyme and a reduced eNOS activity. NADPH oxidase-mediated oxidative stress leads to oxidation of tetrahydrobiopterin (BH4), the essential cofactor of eNOS. In BH4 deficiency, oxygen reduction uncouples from NO synthesis, thereby converting eNOS to a superoxide-producing enzyme. As a consequence of eNOS uncoupling, NO production is reduced and the pre-existing oxidative stress is enhanced, which contribute significantly to atherogenes…

Pharmacologymedicine.medical_specialtyAngiotensin II receptor type 1biologyNitric Oxide Synthase Type IIINitric Oxide Synthase Type IIITetrahydrobiopterinResveratrolbiology.organism_classificationmedicine.disease_causeNitric OxideNebivololNitric oxidechemistry.chemical_compoundEndocrinologychemistryEnosInternal medicineDrug DiscoverymedicineAnimalsHumansVascular DiseasesOxidative stressmedicine.drugCurrent opinion in pharmacology
researchProduct

Ecdysteroid-dependent larval-adult oviduct transformation in the milkweed bugOncopeltus fasciatus requires absence of juvenile hormone

1987

It has been tested whether juvenile hormone plays a role in the larval-adult transformation of lateral oviducts in the milkweed bug. The transformation is ecdysteroid-dependent, as was reported previously2. Application of precocene or juvenile hormone III proved that the absence of juvenile hormone is required.

Pharmacologymedicine.medical_specialtyEcdysteroidLarvaanimal structuresfungiCell BiologyBiologyLygaeidaebiology.organism_classificationCellular and Molecular NeuroscienceTransformation (genetics)chemistry.chemical_compoundEndocrinologychemistryJuvenile hormone IIIInternal medicineJuvenile hormonemedicineMolecular MedicineOviductMolecular BiologyExperientia
researchProduct

Amphotericin B severely affects expression and activity of the endothelial constitutive nitric oxide synthase involving altered mRNA stability

2000

The therapeutic use of the antifungal drug amphotericin B (AmB) is limited due to severe side effects like glomerular vasoconstriction and risk of renal failure during AmB administration. As nitric oxide (NO) has substantial functions in renal autoregulation, we have determined the effects of AmB on endothelial constitutive NO synthase (ecNOS) expression and activity in human and rat endothelial cell cultures. AmB used at concentrations of 0.6 to 1.25 μg ml−1 led to increases in ecNOS mRNA and protein expression as well as NO production. This was the result of an increased ecNOS mRNA half-life. In contrast, incubation of cells with higher albeit subtoxic concentrations of AmB (2.5–5.0 μg ml…

Pharmacologymedicine.medical_specialtybiologyEndotheliumAntifungal drugNitric Oxide Synthase Type IIIPharmacologyNitric oxideNitric oxide synthaseEndothelial stem cellchemistry.chemical_compoundmedicine.anatomical_structureEndocrinologyMechanism of actionchemistryInternal medicineGene expressionmedicinebiology.proteinmedicine.symptomBritish Journal of Pharmacology
researchProduct

AVE3085, an enhancer of endothelial nitric oxide synthase, restores endothelial function and reduces blood pressure in spontaneously hypertensive rats

2011

BACKGROUND AND PURPOSE Nitric oxide (NO) plays an important role in endothelial function, and impaired NO production is involved in hypertension. Therefore, compounds that regulate endothelial NO synthase (eNOS) may be of therapeutic benefit. A novel, low molecular weight compound AVE3085 is a recently developed compound with the ability to enhance eNOS transcription. The present study investigated the effects of AVE3085 in endothelial dysfunction associated with hypertension. EXPERIMENTAL APPROACH Spontaneously hypertensive rats (SHRs) were treated with AVE 3085 (10 mg·kg·day−1, orally) for 4 weeks. Isometric force measurement was performed on rings of isolated aortae in organ baths. Prote…

Pharmacologymedicine.medical_specialtybiologyEndotheliumNitrotyrosineNitric Oxide Synthase Type IIIbiology.organism_classificationmedicine.diseaseNitric oxideNitric oxide synthasechemistry.chemical_compoundEndocrinologymedicine.anatomical_structureBlood pressurechemistryEnosInternal medicinemedicinebiology.proteinEndothelial dysfunctionBritish Journal of Pharmacology
researchProduct

Recombination processes in unintentionally doped GaTe single crystals

2002

Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…

PhotoluminescenceImpurity statesBand gapChemistryExcitonGallium compounds ; III-VI semiconductors ; Photoluminescence ; Impurity states ; Cefect states ; Electron-phonon interactions ; Phonon-exciton interactions ; Excitons ; Red shift ; Radiation quenchingDopingGallium compoundsRadiation quenchingUNESCO::FÍSICAIII-VI semiconductorsGeneral Physics and AstronomyPhonon-exciton interactionsCefect statesAcceptorRed shiftElectron-phonon interactionsCondensed Matter::Materials Science:FÍSICA [UNESCO]ExcitonsPhotoluminescence excitationEmission spectrumIonization energyAtomic physicsPhotoluminescence
researchProduct

Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

2000

Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…

PhotoluminescenceMaterials scienceIII-V semiconductorsScanning electron microscopeAnalytical chemistryGeneral Physics and AstronomySemiconductor thin filmsChemical vapor depositionStacking faultsSurface topographysymbols.namesake:FÍSICA [UNESCO]MagnesiumGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Magnesium ; Semiconductor thin films ; MOCVD coatings ; Scanning electron microscopy ; Raman spectra ; Photoluminescence ; Surface composition ; Surface topography ; Stacking faults ; Inclusions ; ExcitonsPhotoluminescenceWurtzite crystal structureDopingUNESCO::FÍSICAGallium compoundsWide band gap semiconductorsMOCVD coatingsSurface compositionInclusionssymbolsSapphireExcitonsRaman spectraRaman spectroscopyScanning electron microscopyStacking fault
researchProduct

Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
researchProduct

Modulation of the electronic properties of GaN films by surface acoustic waves

2003

We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …

PhotoluminescenceMaterials scienceIII-V semiconductorsSurface acoustic wavesBand gapExcitonRadiation quenchingGeneral Physics and AstronomySemiconductor thin filmsCondensed Matter::Materials Science:FÍSICA [UNESCO]IonizationPiezoelectric semiconductorsPhotoluminescenceQuenchingbusiness.industryUNESCO::FÍSICAWide-bandgap semiconductorGallium compoundsAcoustic waveCondensed Matter::Mesoscopic Systems and Quantum Hall EffectWide band gap semiconductorsGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Surface acoustic waves ; Semiconductor thin films ; Photoluminescence ; Radiation quenching ; Piezoelectric semiconductors ; Excitons ; Energy gapEnergy gapSapphireOptoelectronicsExcitonsbusiness
researchProduct