Search results for " Laser deposition"

Preparation and characterization of (Hg0.7Mo0.3)Sr2(Ca0.7Y0.3)Cu2Ox and (Hg0.9Re0.1)Ba2CaCu2Oy superconducting films by laser ablation

2000

Abstract Oriented (Hg 0.7 Mo 0.3 )Sr 2 (Ca 0.7 Y 0.3 )Cu 2 O x and (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O y superconducting films were prepared on SrTiO 3 substrates using laser ablation and post-Hg-vapor annealing. Due to the stability of Mo 0.3 Sr 2 (Ca 0.7 Y 0.3 )Cu 2 O x and Re 0.1 Ba 2 CaCu 2 O y in air, no special handling was needed during the grinding, mixing and pressing of the precursor targets. The superconductivity of the films was characterized with the temperature dependence of the ac susceptibility ( χ - T ) and the resistance ( R - T ) while the crystallography was probed with x-ray diffraction (XRD) and scanning electron microscopy (SEM).

Resistivity and irreversibility line of (Hg0.9Re0.1)Ba2CaCu2O6+δ HTS thin films

2003

Abstract High-quality epitaxial (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTS thin films were successfully prepared by pulsed laser deposition (PLD) of Hg-free precursor material on (1 0 0)-oriented SrTiO 3 substrates with subsequent Hg vapour annealing. (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTS thin films exhibit sharp superconducting transitions at T c ≈122 K. The electrical resistance for c -axis oriented HgRe-1212 films has been studied as a function of temperature and dc magnetic fields up to 10 T parallel to the crystallographic c -axis. The irreversibility line for the HgRe-1212 has been deduced from the data and investigated as a function of reduced temperature T / T c . The result of the irr…

Normal and mixed state Hall effect in (Hg0.9Re0.1)Ba2CaCu2O6+δ fully textured HTSC thin films

2004

Abstract Temperature and magnetic field dependence of the Hall effect in the normal and mixed state of fully textured (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) HTSC thin films prepared by laser ablation deposition have been studied. The longitudinal resistivity ρxx and Hall resistivity ρyx of HgRe-1212 superconductor thin films were measured for a wide range of magnetic fields from 125 mT to 12 T with the field perpendicular to the ab plane and the current in the ab plane. A sign change of the Hall resistivity is observed in fields below 3 T in the region close to the superconducting onset temperature. The temperature dependencies ρxx ∝ T and ρyx ∝ 1/T have been observed for HgRe-1212 thin films…

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

2018

Superconductivity in high‐quality (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTSC thin films

2004

High-quality epitaxial (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) HTS thin films were successfully prepared using pulsed laser deposition (PLD) of the Re0.1Ba2CaCu2O6+δ precursor and subsequent Hg vapor annealing. The thin films exhibit a sharp superconducting transition at Tc ≈ 120 K. The resistive transitions have been investigated in magnetic fields up to 6 T parallel and perpendicular to the c-axis. We have determined the activation energy of thermally activated flux-motion for both magnetic field orientations. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Graphene and doped-graphene synthesis by Pulse Laser Deposition: a review

2019

International audience; Graphene is a remarkable two-dimensional (2D) material that is of great interest to both academia and industry. Several methods are used to produce either pristine graphene or doped graphene. Among these methods, Pulse Laser Deposition (PLD) has proved to be an alternative route for producing graphene layers from amorphous carbon thin films, due to many advantages including the controlled film thickness and dopant compositions in the films [1]. The present talk will review the ability of PLD to produce graphene and doped graphene films, mainly with nitrogen or boron atoms [2]. The growth mechanism will be highlighted on the basis of XPS investigations in situ during …

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

2020

Abstract The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high trans…

High-quality superconducting titanium nitride thin film growth using infra-red pulsed laser deposition

2018

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ~17 μΩ cm and residual resist…