Search results for " Radiation."
showing 10 items of 2788 documents
Low-temperature luminescence of catangasite single crystals under excitation by vacuum ultraviolet synchrotron radiation
2020
The luminescent properties of Ca3TaGa3Si2O14 (CTGS, catangasite) single crystals have been studied by means of the vacuum ultraviolet excitation spectroscopy utilizing synchrotron radiation from 1.5 GeV storage ring of MAX IV synchrotron facility. Two emission bands at 320 nm (3.87 eV) and 445 nm (2.78 eV) have been detected. Examining excitation spectra in vacuum ultraviolet spectral range, the 320 nm emission band was explained as the emission band of self-trapped exciton in CTGS single crystal. Its atomic structure is discussed. It is also proposed that the 445 nm (2.78 eV) emission in the CTGS is due to the F centers, which have shown a well-resolved excitation (absorption) band at 5.1 …
Rock-salt CdZnO as a transparent conductive oxide
2018
Transparent conducting oxides (TCOs) are widely used in applications from solar cells to light emitting diodes. Here, we show that the metal organic chemical vapor deposition (MOCVD)-grown, rock-salt CdZnO ternary, has excellent potential as a TCO. To assess this compound, we use a combination of infrared reflectance and ultraviolet-visible absorption spectroscopies, together with Hall effect, to determine its optical and electrical transport characteristics. It is found that the incorporation of Zn produces an increment of the electron concentration and mobility, yielding lower resistivities than those of CdO, with a minimum of 1.96 × 10 − 4 Ω · cm for a Zn content of 10%. Moreover, due to…
Low-temperature luminescence of CdI2 under synchrotron radiation
2020
Synchrotron radiation is applied to study visible and UV luminescence spectra and their excitation spectra of undoped as well as In and Sb doped cadmium iodide crystals at 10 K. The origin of principal luminescence bands and the role of impurities in the formation of emission centers are discussed. The luminescence properties have been explained based on the electronic structure of CdI2 crystals.
2019
We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic CoFeB layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially flat for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of up to two in field.
Emerging blue-UV luminescence in cerium doped YAG nanocrystals
2016
Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041
Comparative study of the luminescence properties of macro- and nanocrystalline MgO using synchrotron radiation
2013
MgO nano-powder with an average crystallite size of nanoparticles ranging 10-15 nm was synthesized using the extractive-pyrolytic method and was studied by room temperature VUV spectroscopy under synchrotron radiation excitation. Comparative analysis of their luminescent properties with that of mac- rocrystalline powder analogues and an MgO single crystal, grown by the arc-fusion method, has been per- formed under excitation by pulsed VUV synchrotron radiation. Special attention was paid to VUV spectral range, which is not reachable with commonly used lamp and laser sources. A considerable blue shift of about 0.3 eV in the excitation spectra of 2.95 eV emission band, was revealed in nanocry…
Comparison of the F-type center thermal annealing in heavy-ion and neutron irradiated Al2O3 single crystals
2018
Abstract The optical absorption and thermally stimulated luminescence of Al2O3 (sapphire) single crystals irradiated with swift heavy ions (SHI) 238U with energy 2.4 GeV is studied with the focus on the thermal annealing of the F-type centers in a wide temperature range of 400–1500 K. Its theoretical analysis allows us to obtain activation energies and pre-exponentials of the interstitial oxygen ion migration, which recombine with both types of immobile electron centers (F and F+ centers). A comparison of these kinetics parameters with literature data for a neutron-irradiated sapphire shows their similarity and thus supports the use of SHI-irradiation for modeling the neutron irradiation.
Non-Linearity Extremum in Niobium Doped Potassium Tantalate
1997
We report non-linear dielectric measurements in the KTaO 3 :Nb system (x Nb ≤ 0.05). The non-linear susceptibility diverges at low temperatures and reaches maximum values in the intermediate range (0.0075 ≤ x Nb ≤ 0.02). To account for this extremum non linearity, we propose a model of temperature dependent clusters which fits with a number of experimental reports. We also suggest that this model may be applied to the related compounds SrTiO 3 :Ca and KTaO 3 :Na.
Phase transitions in Na0.5Bi0.5TiO3-(Sr0.7Bi0.2)TiO3-PbTiO3 solid solutions
2016
ABSTRACTIncreasing of Sr0.7Bi0.2TiO3 concentration in Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 solid solutions causes increasing of Bi/Na relation and vacancies in the A-site of perovskite structure. In temperature dependence of dielectric permittivity, such a change of composition is reflected by transforming of the frequency-dependent shoulder into a maximum characteristic for relaxor ferroelectrics and diminishing of the frequency-independent maximum characteristic for Na0.5Bi0.5TiO3. Here changes in behavior of dielectric permittivity and polarization are studied if PbTiO3 is added in a certain concentration range of Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 solid solutions. Changes of the characteristic temp…
The ${JV}$ -Characteristic of Intermediate Band Solar Cells With Overlapping Absorption Coefficients
2017
An analytic expression for the $\textit {JV}$ -characteristic of intermediate band (IB) solar cells with overlapping absorption coefficients is derived. The characteristic contains six voltage-independent parameters that are calculated from material properties, cell properties, and external conditions. Combined with exponential functions containing the cell voltage, these describe the full $\textit {JV}$ -characteristic. Expressions are also derived for the short-circuit current and open-circuit voltage. The model represents a major simplification compared with the existing model for this type of devices. The simplicity will facilitate the understanding of the operation of such cells. Furth…