Search results for " Semiconductors"
showing 10 items of 96 documents
Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxa…
2011
In solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomen…
Noise-induced effects in nonlinear relaxation of condensed matter systems
2015
Abstract Noise-induced phenomena characterise the nonlinear relaxation of nonequilibrium physical systems towards equilibrium states. Often, this relaxation process proceeds through metastable states and the noise can give rise to resonant phenomena with an enhancement of lifetime of these states or some coherent state of the condensed matter system considered. In this paper three noise induced phenomena, namely the noise enhanced stability, the stochastic resonant activation and the noise-induced coherence of electron spin, are reviewed in the nonlinear relaxation dynamics of three different systems of condensed matter: (i) a long-overlap Josephson junction (JJ) subject to thermal fluctuat…
Monte Carlo Simulation of Harmonic Generation in GaAs structures operating under large-signal Conditions
2007
By using a multiparticles Monte Carlo technique, with a self-consistently coupled one-dimensional Poisson solver, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ micro e submicro-structures operating under very intense sub-terahertz signals by: (i) the frequency and the intensity of the excitation signal and (ii) the length of the n region.
Performance enhancements of compound semiconductor radiation detectors using digital pulse processing techniques
2011
Abstract The potential benefits of using compound semiconductors for X-ray and gamma ray spectroscopy are already well known. Radiation detectors based on high atomic number and wide band gap compound semiconductors show high detection efficiency and good spectroscopic performance even at room temperature. Despite these appealing properties, incomplete charge collection is a critical issue. Generally, incomplete charge collection, mainly due to the poor transport properties of the holes, produces energy resolution worsening and the well known hole tailing in the measured spectra. In this work, we present a digital pulse processing (DPP) system for high resolution spectroscopy with compound …
Polarization of the Radiation Emitted in GaAs Semiconductors Driven by Far Infrared Fields
2010
The effects due to the mixing of two far infrared electric fields on the harmonic generation process in low doped GaAs bulks are studied by a three dimensional multivalleys Monte Carlo simulation. The conversion efficiency is calculated by using the appropriate Maxwell equation for the propagation of an electro-magnetic wave along a given direction in the medium. In particular, we focus our attention on the polarization of the generated harmonics, by comparing the polarization obtained from the mixing of an oscillating field with a static electric field with that obtained in the presence of two cyclostationary fields, having an integer ratio between the two frequencies. The findings show th…
Solution processed pentacene thin films: new routes for building-up plastic field effect transistors
2008
Semiconductor @ sensitizer composites for enhanced photoinduced processes
2021
This Chapter provides an overview of common procedures used for the preparation, characterization, and exploration of photocatalytic properties of composite materials based on inorganic semiconductors in combination with sensitizers, such as porphyrins, phthalocyanines, and related macrocyclic compounds as promoters of photoinduced processes. In this context the advantage of hybrid photocatalysts, obtained by impregnation of photosensitizers onto the surface of different semiconductors, designed for improving a choice of diverse reactions has been demonstrated, highlighting innovative aspects that contribute to better sustainability of the photocatalytic processes. Mechanistic details conce…
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Intrinsic Organic Semiconductors as Hole Transport Layers in p–i–n Perovskite Solar Cells
2021
Thin polymeric and small-molecular-weight organic semiconductors are widely employed as hole transport layers (HTLs) in perovskite solar cells. To ensure ohmic contact with the electrodes, the use of doping or additional high work function (WF) interlayer is common. In some cases, however, intrinsic organic semiconductors can be used without any additive or buffer layers, although their thickness must be tuned to ensure selective and ohmic hole transport. Herein, the characteristics of thin HTLs in vacuum-deposited perovskite solar cells are studied, and it is found that only very thin (<5 nm) HTLs readily result inhigh-performing devices, as the HTL acts as a WF enhancer while still ens…