Search results for " excitons"
showing 7 items of 17 documents
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
2002
5 páginas, 4 figuras, 1 tabla.
Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields
2008
6 páginas, 3 figuras.-- Proceedings of the 7th International Conference on Physics of Light-Matter Coupling in Nanostructures.
Unravelling the Intertwined Atomic and Bulk Nature of Localised Excitons by Attosecond Spectroscopy
2021
The electro-optical properties of most semiconductors and insulators of technological interest are dominated by the presence of electron-hole quasi-particles, called excitons. The manipulation of excitons in dielectrics has recently received great attention, with possible applications in different fields including optoelectronics and photonics. Here, we apply attosecond transient reflection spectroscopy in a sequential two-foci geometry and observe sub-femtosecond dynamics of a core-level exciton in bulk MgF2 single crystals. Furthermore, we access absolute phase delays, which allow for an unambiguous comparison with theoretical calculations. Our results show that excitons surprisingly exhi…
Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating
2013
Photoluminescence and time resolved photoluminescence from single metamorphic InAs/GaAs quantum dots (QDs) emitting at 1.3 mu m have been measured by means of a novel fibre-based characterization set-up. We demonstrate that the use of a wavelength tunable fibre Bragg grating filter increases the light collection efficiency by more than one order of magnitude as compared to a conventional grating monochromator. We identified single charged exciton and neutral biexciton transitions in the framework of a random population model. The QD recombination dynamics under pulsed excitation can be understood under the weak quantum confinement potential limit and the interaction between carriers at the …