Search results for " layers"

showing 10 items of 91 documents

Finely Tuned Temperature-Controlled Cargo Release Using Paraffin-Capped Mesoporous Silica Nanoparticles

2011

[EN] Trapped: Mesoporous silica nanoparticles were loaded with a fluorescent guest and functionalized with octadecyltrimethoxysilane. The alkyl chains interact with paraffins, which build a hydrophobic layer around the particle (see picture). Upon melting of the paraffin, the guest molecule is released, as demonstrated in cells for the guest doxorubicin. The release temperature can be tuned by choosing an appropriate paraffin. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Models MolecularINGENIERIA DE LA CONSTRUCCIONGuest moleculesParaffinsParaffin waxesNanoparticlemesoporous materialsMCM-41Phenazine derivativeFunctionalizedCell survivalNanoparticleQUIMICA ORGANICAChemical structureX-Ray DiffractionSafranin tSilicon dioxideControlled releaseAlkyl chainDrug CarriersMicroscopy ConfocalMolecular StructureOctadecyltrimethoxysilaneSurface propertyTemperatureSilicaGeneral MedicineChemistryAntineoplastic agentParaffinHeLa cellPorosityHumanMaterials scienceDrug carrierX ray diffractionSurface PropertiesMesoporous silica nanoparticlesNanotechnologyAntineoplastic AgentsMesoporousCatalysisDrug interactionsArticleMicroscopy Electron TransmissionHumansCell survivalDrug effectDelayed release formulationHydrophobic layersQUIMICA INORGANICAGeneral ChemistryMesoporous silicaMolecular gatesMesoporous materialsMcm 41Confocal microscopyDrug effectSolubilityDoxorubicinDelayed-Action Preparationsdrug deliveryDrug deliveryNanoparticlesPhenazinesnanoparticlesMesoporous materialcontrolled releasemolecular gatesTransmission electron microscopyHeLa CellsAngewandte Chemie
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Mott-Schottky analysis of differential capacitance data of passive-film electrolyte junctions. Is it really providing correct physical insights on th…

2009

Mott-Schottky analysis differential capacitance passive-film electrolyte junctions electronic properties corrosion layers
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Coexistence of structural and magnetic phases in van der Waals magnet CrI3

2021

CrI3 has raised as an important system to the emergent field of two-dimensional van der Waals magnetic materials. However, it is still unclear why CrI3 which has a ferromagnetic rhombohedral structure in bulk, changed to anti-ferromagnetic monoclinic at thin layers. Here we show that this behaviour is due to the coexistence of both monoclinic and rhombohedral crystal phases followed by three magnetic transitions at TC1 = 61 K, TC2 = 50 K and TC3 = 25 K. Each transition corresponds to a certain fraction of the magnetically ordered volume as well as monoclinic and rhombohedral proportion. The different phases are continuously accessed as a function of the temperature over a broad range of mag…

MultidisciplinaryThin layersMaterials scienceField (physics)Condensed matter physicsScienceQGeneral Physics and AstronomyGeneral ChemistryCrystal structureGeneral Biochemistry Genetics and Molecular BiologyCrystalCondensed Matter::Materials Sciencesymbols.namesakeFerromagnetismMagnetCrystalsymbolsFerromagnetismvan der Waals forceMonoclinic crystal system
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Corrosion processes and their inhibition as studied by Mössbauer conversion and other electron spectroscopies

1989

To study corrosion processes of iron and steel and measures of their inhibition, a detailed knowledge of the phase composition and of phase transformations in very thin layers close to the attacked surface of the material is necessary. The information depths of integral (ICEMS) and depth selective (DCEMS) conversion electron Mossbauer spectroscopy are well suited for such investigations, but some effort is necessary if technical samples, i.e. nonenriched in57Fe, are to be studied. In many cases of practical importance, full information on the corroded surfaces cannot be got from Mossbauer spectra only, and a combination with Auger and photoelectron spectroscopies, in-including scanning and …

Nuclear and High Energy PhysicsThin layersMaterials scienceAnalytical chemistryElectronCondensed Matter PhysicsAtomic and Molecular Physics and OpticsAugerCorrosionConversion electron mössbauer spectroscopySputteringPhase (matter)Mössbauer spectroscopyPhysical and Theoretical ChemistryHyperfine Interactions
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Icems and dcems study of Fe layers evaporated onto Al and Si

1990

Thin layers of57Fe (2.5 nm, 10 nm and 70 nm thickness), vacuum evaporated onto Al and Si plates, have been investigated by conversion electron Mossbauer spectroscopy (CEMS). The measurements were performed employing both a proportional counter and a channeltron for conventional and ultrahigh-vacuum integral CEMS (UHV-ICEMS) studies, respectively, and a channeltron for depth-selective CEMS (DCEMS). The phase analysis of the layers on base of experimental results has indicated the presence of metallic iron and one or two iron compounds, ascribed to iron reaction products formed with the residual gas during evaporation. These products are most likely rather stable iron nitrides, are more or le…

Nuclear and High Energy PhysicsThin layersMaterials scienceAnalytical chemistryNitrideCondensed Matter PhysicsEvaporation (deposition)Atomic and Molecular Physics and OpticsMetalConversion electron mössbauer spectroscopyvisual_artvisual_art.visual_art_mediumPhysical and Theoretical ChemistryThin filmSpectroscopyLayer (electronics)Hyperfine Interactions
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Physicochemical Characterization of Passive Films and Corrosion Layers by Differential Admittance and Photocurrent Spectroscopy

2009

Two different electrochemical techniques, differential admittance and photocurrent spectroscopy, for the characterization of electronic and solid state properties of passive films and corrosion layers are described and critically evaluated. In order to get information on the electronic properties of passive film and corrosion layers as well as the necessary information to locate the characteristic energy levels of the passive film/electrolyte junction like: flat band potential (Ufb), conduction band edge (EC) or valence band edge (EV), a wide use of Mott-Schottky plots is usually reported in corrosion science and passivity studies. It has been shown, in several papers, that the use of simpl…

PhotocurrentMaterials sciencePassive Films Corrosion Layers Differential Admittance Photocurrent SpectroscopyPassivityOxideAnalytical chemistryElectrolyteCorrosionCharacterization (materials science)Metalchemistry.chemical_compoundchemistryvisual_artvisual_art.visual_art_mediumComposite materialLayer (electronics)
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Photoelectrochemical Techniques in Corrosion Studies

2005

Photoelectrochemical Techniques Corrosion layers passive filmsMaterials scienceMetallurgyCorrosion
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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

2002

5 páginas, 4 figuras, 1 tabla.

PhotoluminescenceMaterials sciencePhononExcitonBinding energyPolaritonsGeneral Physics and AstronomyMolecular physicssymbols.namesakeCondensed Matter::Materials Science:FÍSICA [UNESCO]PolaritonZinc compoundsThin filmPhotoluminescencebusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICAII-VI semiconductorsZinc compounds ; II-VI semiconductors ; Raman spectra ; Photoluminescence ; Excitons ; Polaritons ; Semiconductor epitaxial layerssymbolsOptoelectronicsExcitonsRaman spectrabusinessRaman spectroscopyRaman scattering
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
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