Search results for " semiconductor"

MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade

2018

Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…

Intraband and interband spin-orbit torques in noncentrosymmetric ferromagnets

2015

Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using Kubo formula. In addition to the current-driven field-like torque ${\bf T}_{\rm FL}= \tau_{\rm FL}{\bf m}\times{\bf u}_{\rm so}$ (${\bf u}_{\rm so}$ being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form ${\bf T}_{\rm DL}= \tau_{\rm DL}{\bf m}\times({\bf u}_{\rm so}\times{\bf m})$. Analytical expressions are obtained in the model case of a magnetic Rashba two-dimension…

2008

ZnO doped with a few per cent (<10%) of magnetic ions such as Co exhibit room temperature (RT) ferromagnetism, transforming it into a very promising candidate for future spin electronic applications. We present x-ray magnetic circular dichroism (XMCD) spectroscopy, which has been used in total electron yield, total fluorescence yield, and reflection mode to investigate the origin of ferromagnetism in such diluted magnetic semiconductor materials in a surface, bulk and interface sensitive way, respectively. We investigated three different types of samples: ZnO doped with 5% Co, artificially layered films, and layered films with additional co-doping of 10% Li. These films are prepared by puls…

Electronic structure calculations forZnFe2O4

2011

Local density approximation was applied to scrutinize the electronic structure and magnetic properties of the spinel ferrite ${\mathrm{ZnFe}}_{2}{\mathrm{O}}_{4}$. Various cation distributions were established to obtain the ground state for the system. In magnetic crystals, the position of the atoms is not enough for symmetry determination. A structure prediction by decreasing the octahedral point group symmetry ${\mathrm{O}}_{h}$ of Fe to ${\mathrm{D}}_{4h}$, ${\mathrm{C}}_{4v}$, and ${\mathrm{C}}_{3v}$ was carried out. The effect of the exchange and correlation terms on the band structure of ${\mathrm{ZnFe}}_{2}{\mathrm{O}}_{4}$ was studied by the generalized gradient approximation $+$ th…

Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxa…

2011

In solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomen…

Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling

2004

The transport equations for charges in a semiconductor have been solved for a periodic voltage excitation by means of a harmonic approach, for modelling of microwave and millimetre-wave active devices. The solution is based on the expansion of the unknown physical quantities in Fourier series in the time domain, and on the discretisation in the space domain. A Waveform-Balance technique in the time domain is used to solve the resulting non-linear equations system. In this way the time step is determined only by Nyquist's sampling requirements at the operating frequency, irrespective of the relaxation times of the semiconductor. This approach allows for a longer time step, and therefore a sh…

Disorder and localization effects on the local spectroscopic and infrared optical properties ofGa1−xMnxAs

2015

We study numerically the influence of disorder and localization effects on the local spectroscopic characteristics and infrared optical properties of ${\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As}$. We treat the band structure and disorder effects at an equal level by using an exact diagonalization supercell simulation method. This method accurately describes the low-doping limit and gives a clear picture of the transition to higher dopings, which captures the localization effects inaccessible to other theoretical methods commonly used. Our simulations capture the rich in-gap localized states observed in scanning tunneling microscopy studies and reproduce the observed features of t…

Noise-induced effects in nonlinear relaxation of condensed matter systems

2015

Abstract Noise-induced phenomena characterise the nonlinear relaxation of nonequilibrium physical systems towards equilibrium states. Often, this relaxation process proceeds through metastable states and the noise can give rise to resonant phenomena with an enhancement of lifetime of these states or some coherent state of the condensed matter system considered. In this paper three noise induced phenomena, namely the noise enhanced stability, the stochastic resonant activation and the noise-induced coherence of electron spin, are reviewed in the nonlinear relaxation dynamics of three different systems of condensed matter: (i) a long-overlap Josephson junction (JJ) subject to thermal fluctuat…

Stabilizing and increasing the magnetic moment of half-metals: The role of Li in half-HeuslerLiMnZ(Z=N,P,Si)

2015

Due to their similarities to metastable zinc-blende half-metals, we systematically examined the half-Heusler compounds $\ensuremath{\beta}\text{-LiMn}Z$ ($Z=\text{N},\text{P}$ and Si) for their electronic, magnetic, and stability properties at optimized lattice constants and strained lattice constants that exhibit half-metallic properties. We also report the other phases of the half-Heusler structure ($\ensuremath{\alpha}$ and $\ensuremath{\gamma}$ phases), but they are unlikely to be grown. The magnetic moments of these stable Li-based compounds are expected to reach as high as $4{\ensuremath{\mu}}_{\mathrm{B}}$ per unit cell when $Z=\text{Si}$ and $5{\ensuremath{\mu}}_{\mathrm{B}}$ per un…

A Coherent Master Equation for active mode locking in lasers

2015

We present the derivation of a new master equation for active mode locking in lasers that fully takes into account the coherent effects of the light matter interaction through a peculiar adiabatic elimination technique. The coherent effects included in our model could be relevant to describe properly mode-locked semiconductor lasers where the standard Haus’ Master Equation predictions show some discrepancy with respect to the experimental results and can be included in the modelling of other mode locking techniques too.